9999js金沙老品牌(中国)Macau有限公司

ONFI5.1

The INNO_IO_PHY provides turnkey physical interface solutions for ICs requiring access to JEDEC-compatible SDRAM devices. It is optimized for low-power and high-speed applications with robust timing and a small silicon area. The IO PHY components contain IO specialized functional and utility IOs up to NV-DDR3 & NV-LPDDR4, support configurable input and output impedance, and automatic impedance calibration with programmable slew rate control for any SDRAM interface.

The INNO_DIFFIO_PHY provides turnkey physical interface solutions for ICs requiring access to JEDEC-compatible SDRAM devices. It is optimized for low-power and high-speed applications with robust timing and a small silicon area. The differential IO PHY components contain IO specialized functional and utility IOs up to NV-DDR3 & NV-LPDDR4, support configurable input and output impedance, and automatic impedance calibration with programmable slew rate control for any SDRAM interface.

The INNO_CALIBRATION_PHY provides turnkey impedance calibration solutions for ICs It is optimized for low-power and high-precision applications with small silicon areas. The impedance calibration PHY supports configurable input and output impedance and automatic impedance calibration with high precision.

The INNO_VREF_PHY provides turnkey precise voltage control solutions for ICs It is optimized for low power and high-precision applications with small silicon area. The VREF PHY supports configurable output reference voltage with high precision and high linearity by 8 control bits.

The INNO_VDDQ_PHY provides ESD protection solutions, IO buffer and POC (power on control) functions for ICs. The INNO_VSS_PHY provides ESD protection solutions between different power or ground for ICs. The INNO_VDD_PHY provides power clamp solutions between the core voltage domain and core ground for ICs.

KEY FEATURES:

  • INNO_IO_PHY

  • IO power supply: 1.8V for NV-DDR/ NV-DDR2, 1.2V for NV-DDR3/NV-LPDDR4

  • ESD: HBM 2000V, CDM 200V

  • INNO_DIFFIO_PHY

  • IO power supply: 1.8V for NV-DDR/ NV-DDR2, 1.2V for NV-DDR3/NV-LPDDR4

  • ESD: HBM 2000V, CDM 500V

  • INNO_CALIBRATION_PHY

  • IO power supply: 1.8V for NV-DDR/ NV-DDR2, 1.2V for NV-DDR3/NV-LPDDR4

  • Support configurable input and output impedance

  • Support automatic impedance calibration

  • High precision

  • INNO_VREF_PHY

  • IO power supply: 1.8V for NV-DDR/ NV-DDR2, 1.2V for NV-DDR3/NV-LPDDR4

  • High linearity.

  • High precision

INNOSILICON ADVANTAGES:

  • High bandwidth

  • High speed

  • High performance

  • Strong compatibility

  • Low power consumption

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